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Manufacturer | NEXPERIA | |
Type of transistor | P-MOSFET | |
Polarisation | unipolar | |
Drain-source voltage | -30V | |
Drain current | -3.4A | |
Pulsed drain current | -11A | |
Power dissipation | 0.51W | |
Case | SOT23, TO236AB | |
Gate-source voltage | ±20V | |
On-state resistance | 90mΩ | |
Mounting | SMD | |
Gate charge | 5.7nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |