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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N/P-MOSFET
Polarisation	unipolar
Drain-source voltage	30/-30V
Drain current	9/-8A
Pulsed drain current	18A
Power dissipation	2.6W
Case	TSMT8
Gate-source voltage	±20V
On-state resistance	23.7/40.3mΩ
Mounting	SMD
Gate charge	15.5/19.6nC
Kind of package	reel, tape
Kind of channel	enhancement

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Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8A; Idm: 18A; 2.6W

Specification

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