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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-4A
Pulsed drain current	-16A
Power dissipation	1.5W
Case	TSMT8
Gate-source voltage	±20V
On-state resistance	84mΩ
Mounting	SMD
Gate charge	8.4nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

QS8J4TR

Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8

Specification

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