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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	650V
Drain current	47A
Pulsed drain current	141A
Power dissipation	480W
Case	TO247
Gate-source voltage	±20V
On-state resistance	80mΩ
Mounting	THT
Gate charge	0.1µC
Kind of package	tube
Kind of channel	enhancement

R6547KNZ4C13

Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 141A; 480W; TO247

Specification