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RGT50NS65DGC9

Transistor: IGBT; 650V; 25A; 97W; TO262

Documentation EN
Product family

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
RGT50NS65DGC9
TME Symbol:
RGT50NS65DGC9

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
IGBT
Collector-emitter voltage
650V
Collector current
25A
Power dissipation
97W
Case
TO262
Gate-emitter voltage
±30V
Pulsed collector current
75A
Mounting
THT
Gate charge
49nC
Kind of package
tube
Turn-on time
65ns
Turn-off time
210ns
Features of semiconductor devices
integrated anti-parallel diode
Gross weight1.5 g
Certificates

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RGT50NS65DGC9
0 in TME stock
Net price for quantities from 1 pcs - 3.67 USDGross price for quantities from 1 pcs - 3.67 USD
Net price for quantities from 10 pcs - 2.59 USDGross price for quantities from 10 pcs - 2.59 USD
Net price for quantities from 50 pcs - 2.27 USDGross price for quantities from 50 pcs - 2.27 USD
Net price for quantities from 100 pcs - 2.15 USDGross price for quantities from 100 pcs - 2.15 USD
Net price for quantities from 500 pcs - 1.92 USDGross price for quantities from 500 pcs - 1.92 USD
Net price for quantities from 1000 pcs - 1.85 USDGross price for quantities from 1000 pcs - 1.85 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.