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RQ3E080GNTB

Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 32A; 14W; HSMT8

Product family

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
RQ3E080GNTB
TME Symbol:
RQ3E080GNTB

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
30V
Drain current
18A
Pulsed drain current
32A
Power dissipation
14W
Case
HSMT8
Gate-source voltage
±20V
On-state resistance
31.2mΩ
Mounting
SMD
Gate charge
5.8nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.01 g
Certificates

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RQ3E080GNTB
0 in TME stock
Net price for quantities from 1 pcs - 0.63 USDGross price for quantities from 1 pcs - 0.63 USD
Net price for quantities from 10 pcs - 0.39 USDGross price for quantities from 10 pcs - 0.39 USD
Net price for quantities from 100 pcs - 0.21 USDGross price for quantities from 100 pcs - 0.21 USD
Net price for quantities from 500 pcs - 0.16 USDGross price for quantities from 500 pcs - 0.16 USD
Net price for quantities from 1000 pcs - 0.16 USDGross price for quantities from 1000 pcs - 0.16 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.