+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

No U.S. Customs – Order from TME with Confidence

Here you will find out more

RS1E321GNTB1

Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 128A; 34W; HSOP8


Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
RS1E321GNTB1
TME Symbol:
RS1E321GNTB1

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
30V
Drain current
80A
Pulsed drain current
128A
Power dissipation
34W
Case
HSOP8
Gate-source voltage
±20V
On-state resistance
2.9mΩ
Mounting
SMD
Gate charge
42.8nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.1 g
Certificates

WATCH VIDEO

See other products in this category: SMD N channel transistors ROHM SEMICONDUCTOR,
*
RS1E321GNTB1
0 in TME stock
Net price for quantities from 2500 pcs - 0.95 USDGross price for quantities from 2500 pcs - 0.95 USD
Net price for quantities from 5000 pcs - 0.89 USDGross price for quantities from 5000 pcs - 0.89 USD
No. of pieces (Multiplicity: 2 500)
Minimum order quantity: 2 500.
Multiplicity: 2 500.