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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	30V
Drain current	80A
Pulsed drain current	140A
Power dissipation	35W
Case	HSOP8
Gate-source voltage	±20V
On-state resistance	2.5mΩ
Mounting	SMD
Gate charge	185nC
Kind of package	reel, tape
Kind of channel	enhancement

RS1E350BNTB

Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8

Specification

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