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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	900V
Drain current	110A
Pulsed drain current	454A
Power dissipation	625W
Case	H2PAK7
Gate-source voltage	-10...22V
On-state resistance	15.8mΩ
Mounting	SMD
Gate charge	138nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

SCT012H90G3AG

Transistor: N-MOSFET; SiC; unipolar; 900V; 110A; Idm: 454A; 625W

Specification