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SCT040H65G3AG

Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 160A; 221W

Manufacturer: STMicroelectronics

Manufacturer part number:
SCT040H65G3AG
TME Symbol:
SCT040H65G3AG

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
650V
Drain current
30A
Pulsed drain current
160A
Power dissipation
221W
Case
H2PAK7
Gate-source voltage
-10...22V
On-state resistance
63mΩ
Mounting
SMD
Gate charge
39.5nC
Kind of package
reel, tape
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight1 g
Certificates
See other products in this category: SMD N channel transistors STMicroelectronics,
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SCT040H65G3AG
0 in TME stock
Net price for quantities from 1 pcs - 11.10 USDGross price for quantities from 1 pcs - 11.10 USD
Net price for quantities from 5 pcs - 9.20 USDGross price for quantities from 5 pcs - 9.20 USD
Net price for quantities from 10 pcs - 8.89 USDGross price for quantities from 10 pcs - 8.89 USD
No. of pieces (Multiplicity: 1)