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SCT070W120G3-4AG

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 116A; 236W

Manufacturer: STMicroelectronics

Manufacturer part number:
SCT070W120G3-4AG
TME Symbol:
SCT070W120G3-4AG

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
30A
Pulsed drain current
116A
Power dissipation
236W
Case
HIP247-4
Gate-source voltage
-10...22V
On-state resistance
87mΩ
Mounting
THT
Gate charge
41nC
Kind of package
tube
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Application
automotive industry
Gross weight5 g
Certificates
See other products in this category: THT N channel transistors STMicroelectronics,
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SCT070W120G3-4AG
0 in TME stock
Net price for quantities from 1 pcs - 12.46 USDGross price for quantities from 1 pcs - 12.46 USD
Net price for quantities from 3 pcs - 11.23 USDGross price for quantities from 3 pcs - 11.23 USD
Net price for quantities from 5 pcs - 10.92 USDGross price for quantities from 5 pcs - 10.92 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.