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SCT1000N170

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 7A; Idm: 20A; 96W

Manufacturer: STMicroelectronics

Manufacturer part number:
SCT1000N170
TME Symbol:
SCT1000N170

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.7kV
Drain current
7A
Pulsed drain current
20A
Power dissipation
96W
Case
HIP247™
Gate-source voltage
-10...22V
On-state resistance
1.3Ω
Mounting
THT
Gate charge
13.3nC
Kind of package
tube
Kind of channel
enhancement
Gross weight5.3 g
Certificates
See other products in this category: THT N channel transistors STMicroelectronics,
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SCT1000N170
23 in TME stock
Net price for quantities from 1 pcs - 8.68 USDGross price for quantities from 1 pcs - 8.68 USD
Net price for quantities from 3 pcs - 7.75 USDGross price for quantities from 3 pcs - 7.75 USD
Net price for quantities from 5 pcs - 7.17 USDGross price for quantities from 5 pcs - 7.17 USD
Net price for quantities from 10 pcs - 6.93 USDGross price for quantities from 10 pcs - 6.93 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerTube = 30 pcs