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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	55A
Pulsed drain current	137A
Power dissipation	262W
Case	TO247
Gate-source voltage	-4...22V
On-state resistance	52mΩ
Mounting	THT
Gate charge	107nC
Kind of package	tube
Kind of channel	enhancement

SCT3040KLHRC11

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W

Specification