+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

Quick Buy Favourites

No U.S. Customs – Order from TME with Confidence

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	30A
Pulsed drain current	75A
Power dissipation	134W
Case	TO247
Gate-source voltage	-4...22V
On-state resistance	0.104Ω
Mounting	THT
Gate charge	48nC
Kind of package	tube
Kind of channel	enhancement

SCT3080ALGC11

Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247

Specification