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SCT50N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W

Manufacturer: STMicroelectronics

Manufacturer part number:
SCT50N120
TME Symbol:
SCT50N120

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC, SiCFET
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
50A
Pulsed drain current
130A
Power dissipation
318W
Case
HIP247™
Gate-source voltage
-10...25V
On-state resistance
70mΩ
Mounting
THT
Gate charge
122nC
Kind of package
tube
Kind of channel
enhancement
Gross weight4.44 g
Certificates
See other products in this category: THT N channel transistors STMicroelectronics,
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SCT50N120
48 in TME stock
Net price for quantities from 1 pcs - 27.83 USDGross price for quantities from 1 pcs - 27.83 USD
Net price for quantities from 3 pcs - 26.63 USDGross price for quantities from 3 pcs - 26.63 USD
Net price for quantities from 10 pcs - 25.33 USDGross price for quantities from 10 pcs - 25.33 USD
Net price for quantities from 30 pcs - 25.32 USDGross price for quantities from 30 pcs - 25.32 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs