SCTH35N65G2V-7
Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Manufacturer: STMicroelectronics
Manufacturer part number:
SCTH35N65G2V-7
TME Symbol:
SCTH35N65G2V-7
Specification
Manufacturer | STMicroelectronics | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 650V | |
Drain current | 45A | |
Pulsed drain current | 90A | |
Power dissipation | 208W | |
Case | H2PAK7 | |
Gate-source voltage | -10...22V | |
On-state resistance | 67mΩ | |
Mounting | SMD | |
Gate charge | 73nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight1 g
Certificates
See other products in this category: SMD N channel transistors STMicroelectronics,
* SCTH35N65G2V-7No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 15.84 USDGross price for quantities from 1 pcs - 15.84 USD
Net price for quantities from 5 pcs - 14.96 USDGross price for quantities from 5 pcs - 14.96 USD