SCTH60N120G2-7
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 390W
Manufacturer: STMicroelectronics
Manufacturer part number:
SCTH60N120G2-7
TME Symbol:
SCTH60N120G2-7
Specification
Manufacturer | STMicroelectronics | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 60A | |
Pulsed drain current | 177A | |
Power dissipation | 390W | |
Case | H2PAK7 | |
Gate-source voltage | -10...22V | |
On-state resistance | 52mΩ | |
Mounting | SMD | |
Gate charge | 94nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight1 g
Certificates
See other products in this category: SMD N channel transistors STMicroelectronics,
* SCTH60N120G2-7No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 40.29 USDGross price for quantities from 1 pcs - 40.29 USD
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