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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	40A
Pulsed drain current	160A
Power dissipation	417W
Case	PowerFLAT 8x8
Gate-source voltage	-10...22V
On-state resistance	67mΩ
Mounting	SMD
Gate charge	73nC
Kind of package	reel, tape
Kind of channel	enhancement

SCTL35N65G2V

Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 417W

Specification