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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	100A
Pulsed drain current	280A
Power dissipation	420W
Case	HIP247™
Gate-source voltage	-10...22V
On-state resistance	26mΩ
Mounting	THT
Gate charge	162nC
Kind of package	tube
Kind of channel	enhancement
Application	automotive industry

SCTW100N65G2AG

Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 280A; 420W

Specification