SCTW35N65G2V
Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Manufacturer: STMicroelectronics
Manufacturer part number:
SCTW35N65G2V
TME Symbol:
SCTW35N65G2V
Specification
Manufacturer | STMicroelectronics | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 650V | |
Drain current | 45A | |
Pulsed drain current | 90A | |
Power dissipation | 240W | |
Case | HIP247™ | |
Gate-source voltage | -10...22V | |
On-state resistance | 68mΩ | |
Mounting | THT | |
Gate charge | 73nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Gross weight5.38 g
Certificates
See other products in this category: THT N channel transistors STMicroelectronics,
* SCTW35N65G2VNo. of pieces (Multiplicity: 1)
28 in TME stock
Net price for quantities from 1 pcs - 10.68 USDGross price for quantities from 1 pcs - 10.68 USD
Net price for quantities from 600 pcs - 9.31 USDGross price for quantities from 600 pcs - 9.31 USD
Packaging method by the manufacturerTube = 30 pcs