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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	25A
Pulsed drain current	100A
Power dissipation	290W
Case	HIP247™
Gate-source voltage	-10...22V
On-state resistance	0.195Ω
Mounting	THT
Gate charge	63nC
Kind of package	tube
Kind of channel	enhancement
Application	automotive industry

SCTW40N120G2VAG

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W

Specification