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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	90A
Pulsed drain current	220A
Power dissipation	565W
Case	HIP247™
Gate-source voltage	-10...22V
On-state resistance	30mΩ
Mounting	THT
Gate charge	157nC
Kind of package	tube
Kind of channel	enhancement

SCTW90N65G2V

Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W

Specification