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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	16A
Pulsed drain current	45A
Power dissipation	175W
Case	HIP247™
Gate-source voltage	-10...22V
On-state resistance	0.22Ω
Mounting	THT
Gate charge	45nC
Kind of package	tube
Kind of channel	enhancement

SCTWA20N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W

Specification