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SCTWA30N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W

Manufacturer: STMicroelectronics

Manufacturer part number:
SCTWA30N120
TME Symbol:
SCTWA30N120

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
34A
Pulsed drain current
90A
Power dissipation
270W
Case
HIP247™
Gate-source voltage
-10...22V
On-state resistance
0.1Ω
Mounting
THT
Gate charge
105nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.06 g
Certificates
See other products in this category: THT N channel transistors STMicroelectronics,
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SCTWA30N120
1 in TME stock
Net price for quantities from 1 pcs - 42.26 USDGross price for quantities from 1 pcs - 42.26 USD
Net price for quantities from 3 pcs - 38.04 USDGross price for quantities from 3 pcs - 38.04 USD
Net price for quantities from 10 pcs - 33.60 USDGross price for quantities from 10 pcs - 33.60 USD
Net price for quantities from 30 pcs - 30.20 USDGross price for quantities from 30 pcs - 30.20 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Packaging method by the manufacturerTube = 30 pcs