SGT120R65AL
Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Manufacturer: STMicroelectronics
Manufacturer part number:
SGT120R65AL
TME Symbol:
SGT120R65AL
Specification
Manufacturer | STMicroelectronics | |
Type of transistor | N-JFET | |
Technology | GaN | |
Polarisation | unipolar | |
Kind of transistor | HEMT | |
Drain-source voltage | 650V | |
Drain current | 9A | |
Pulsed drain current | 36A | |
Power dissipation | 192W | |
Case | PowerFLAT 5x6 | |
Gate-source voltage | -10...7V | |
On-state resistance | 0.12Ω | |
Mounting | SMD | |
Gate charge | 3nC | |
Kind of package | tape | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight1 g
Certificates
See other products in this category: SMD N channel transistors STMicroelectronics,
* SGT120R65ALNo. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 5.32 USDGross price for quantities from 1 pcs - 5.32 USD
Net price for quantities from 10 pcs - 4.56 USDGross price for quantities from 10 pcs - 4.56 USD
Net price for quantities from 100 pcs - 3.67 USDGross price for quantities from 100 pcs - 3.67 USD
Net price for quantities from 500 pcs - 3.29 USDGross price for quantities from 500 pcs - 3.29 USD
Net price for quantities from 1000 pcs - 3.03 USDGross price for quantities from 1000 pcs - 3.03 USD
Net price for quantities from 3000 pcs - 2.94 USDGross price for quantities from 3000 pcs - 2.94 USD