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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	-60V
Drain current	-4.5A
Pulsed drain current	-18A
Power dissipation	2W
Case	SO8
Gate-source voltage	±20V
On-state resistance	85mΩ
Mounting	SMD
Gate charge	40nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

SH8J31GZETB

Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8

Specification

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