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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-9A
Pulsed drain current	-36A
Power dissipation	2W
Case	SO8
Gate-source voltage	±20V
On-state resistance	24.7mΩ
Mounting	SMD
Gate charge	35nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

SH8J66TB1

Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8; ESD

Specification

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