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SH8JB5TB1

Transistor: P-MOSFET x2; unipolar; -40V; -8.5A; Idm: -34A; 2W; SO8

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
SH8JB5TB1
TME Symbol:
SH8JB5TB1

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
P-MOSFET x2
Polarisation
unipolar
Drain-source voltage
-40V
Drain current
-8.5A
Pulsed drain current
-34A
Power dissipation
2W
Case
SO8
Gate-source voltage
±20V
On-state resistance
18.7mΩ
Mounting
SMD
Gate charge
51nC
Kind of package
reel, tape
Kind of channel
enhancement
Version
ESD
Gross weight0.1 g
Certificates

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SH8JB5TB1
0 in TME stock
No. of pieces (Multiplicity: 2 500)
Product for special order