SI1023CX-T1-GE3
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -0.45A; 0.22W
Manufacturer: VISHAY
Manufacturer part number:
SI1023CX-T1-GE3
TME Symbol:
SI1023CX-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -20V | |
Drain current | -0.45A | |
Pulsed drain current | -1.5A | |
Power dissipation | 0.22W | |
Case | SC89, SOT563 | |
Gate-source voltage | ±8V | |
On-state resistance | 2.4Ω | |
Mounting | SMD | |
Gate charge | 2.5nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SI1023CX-T1-GE3No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.17 USDGross price for quantities from 3000 pcs - 0.17 USD