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Manufacturer	VISHAY
Type of transistor	N/P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	30/-30V
Drain current	0.7/-0.5A
Power dissipation	0.34W
Case	SC70-6, SOT363
Gate-source voltage	±20V
On-state resistance	1.7Ω/525mΩ
Mounting	SMD
Gate charge	3/1.5nC
Kind of package	reel, tape
Kind of channel	enhancement

SI1539CDL-T1-GE3

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 0.7/-0.5A

Specification