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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	0.63A
Pulsed drain current	1A
Power dissipation	0.3W
Case	SC70-6, SOT363
Gate-source voltage	±20V
On-state resistance	0.7Ω
Mounting	SMD
Gate charge	1.4nC
Kind of package	reel, tape
Kind of channel	enhancement

SI1900DL-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 0.63A; Idm: 1A

Specification