SI1902DL-T1-GE3
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 0.66A; Idm: 1A
Manufacturer: VISHAY
Manufacturer part number:
SI1902DL-T1-GE3
TME Symbol:
SI1902DL-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 20V | |
Drain current | 0.66A | |
Pulsed drain current | 1A | |
Power dissipation | 0.27W | |
Case | SC70-6, SOT363 | |
Gate-source voltage | ±12V | |
On-state resistance | 0.63Ω | |
Mounting | SMD | |
Gate charge | 0.8nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.01 g
Certificates
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* SI1902DL-T1-GE3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 3 pcs - 0.40 USDGross price for quantities from 3 pcs - 0.40 USD
Net price for quantities from 25 pcs - 0.36 USDGross price for quantities from 25 pcs - 0.36 USD
Net price for quantities from 100 pcs - 0.32 USDGross price for quantities from 100 pcs - 0.32 USD
Net price for quantities from 500 pcs - 0.29 USDGross price for quantities from 500 pcs - 0.29 USD
Net price for quantities from 3000 pcs - 0.27 USDGross price for quantities from 3000 pcs - 0.27 USD