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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-2.2A
Pulsed drain current	-10A
Power dissipation	0.9W
Case	SOT23
Gate-source voltage	±8V
On-state resistance	0.15Ω
Mounting	SMD
Gate charge	10nC
Kind of package	reel, tape
Kind of channel	enhancement

SI2301BDS-T1-E3

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A

Specification