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SI3443BDV-T1-E3

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A


Manufacturer: VISHAY

Manufacturer part number:
SI3443BDV-T1-E3
TME Symbol:
SI3443BDV-T1-E3

Specification

Manufacturer
VISHAY
Type of transistor
P-MOSFET
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
-20V
Drain current
-3.6A
Pulsed drain current
-20A
Power dissipation
1.1W
Case
SC74, TSOP6
Gate-source voltage
±12V
On-state resistance
0.1Ω
Mounting
SMD
Gate charge
9nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.026 g
Certificates

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SI3443BDV-T1-E3
6 in TME stock
Net price for quantities from 1 pcs - 0.47 USDGross price for quantities from 1 pcs - 0.47 USD
Net price for quantities from 10 pcs - 0.32 USDGross price for quantities from 10 pcs - 0.32 USD
Net price for quantities from 25 pcs - 0.29 USDGross price for quantities from 25 pcs - 0.29 USD
Net price for quantities from 100 pcs - 0.26 USDGross price for quantities from 100 pcs - 0.26 USD
Net price for quantities from 500 pcs - 0.23 USDGross price for quantities from 500 pcs - 0.23 USD
Net price for quantities from 3000 pcs - 0.22 USDGross price for quantities from 3000 pcs - 0.22 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Packaging method by the manufacturerReel = 3 000 pcs