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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-12V
Drain current	-8A
Pulsed drain current	-20A
Power dissipation	4.2W
Case	SC74, TSOP6
Gate-source voltage	±8V
On-state resistance	36mΩ
Mounting	SMD
Gate charge	65nC
Kind of package	reel, tape
Kind of channel	enhancement

SI3473CDV-T1-E3

Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A

Specification