SI3483CDV-T1-E3
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7A; Idm: -25A
Manufacturer: VISHAY
Manufacturer part number:
SI3483CDV-T1-E3
TME Symbol:
SI3483CDV-T1-E3
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -30V | |
Drain current | -7A | |
Pulsed drain current | -25A | |
Power dissipation | 4.2W | |
Case | SC74, TSOP6 | |
Gate-source voltage | ±20V | |
On-state resistance | 53mΩ | |
Mounting | SMD | |
Gate charge | 33nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.1 g
Certificates
See other products in this category: SMD P channel transistors VISHAY,
* SI3483CDV-T1-E3No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.30 USDGross price for quantities from 3000 pcs - 0.30 USD
Net price for quantities from 6000 pcs - 0.29 USDGross price for quantities from 6000 pcs - 0.29 USD
Net price for quantities from 9000 pcs - 0.28 USDGross price for quantities from 9000 pcs - 0.28 USD
Net price for quantities from 21000 pcs - 0.27 USDGross price for quantities from 21000 pcs - 0.27 USD