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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	200V
Drain current	3.2A
Power dissipation	3.1W
Case	SO8
Gate-source voltage	±20V
On-state resistance	90mΩ
Mounting	SMD
Gate charge	42nC
Kind of package	reel, tape
Kind of channel	enhancement

SI4490DY-E3

Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 3.2A; 3.1W; SO8

Specification