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Manufacturer	VISHAY
Type of transistor	N/P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	40/-40V
Drain current	8/-7.4A
Pulsed drain current	40A
Power dissipation	2/2.1W
Case	SO8
Gate-source voltage	±16V, ±20V
On-state resistance	17.5/21mΩ
Mounting	SMD
Gate charge	31/63nC
Kind of package	reel, tape
Kind of channel	enhancement

SI4564DY-T1-GE3

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40/-40V; 8/-7.4A

Specification

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