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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2 + Schottky
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	25V
Drain current	8A
Pulsed drain current	30A
Power dissipation	2.8W
Case	SO8
Gate-source voltage	±16V
On-state resistance	28mΩ
Mounting	SMD
Gate charge	18nC
Kind of package	reel, tape
Kind of channel	enhancement

SI4670DY-T1-GE3

Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 25V; 8A

Specification