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Manufacturer	VISHAY
Type of transistor	P-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-12V
Drain current	-8.9A
Pulsed drain current	-30A
Power dissipation	2W
Case	SO8
Gate-source voltage	±8V
On-state resistance	28mΩ
Mounting	SMD
Gate charge	52nC
Kind of package	reel, tape
Kind of channel	enhancement

SI4931DY-T1-GE3

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8

Specification