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Manufacturer	VISHAY
Type of transistor	P-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-8.4A
Pulsed drain current	-30A
Power dissipation	2W
Case	SO8
Gate-source voltage	±20V
On-state resistance	31mΩ
Mounting	SMD
Gate charge	25nC
Kind of package	reel, tape
Kind of channel	enhancement

SI4943BDY-T1-E3

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8

Specification