SI4943CDY-T1-E3
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Manufacturer: VISHAY
Manufacturer part number:
SI4943CDY-T1-E3
TME Symbol:
SI4943CDY-T1-E3
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -20V | |
Drain current | -8A | |
Pulsed drain current | -30A | |
Power dissipation | 3.1W | |
Case | SO8 | |
Gate-source voltage | ±20V | |
On-state resistance | 33mΩ | |
Mounting | SMD | |
Gate charge | 62nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SI4943CDY-T1-E3No. of pieces (Multiplicity: 2 500)
0 in TME stock
Net price for quantities from 2500 pcs - 0.64 USDGross price for quantities from 2500 pcs - 0.64 USD
Net price for quantities from 5000 pcs - 0.62 USDGross price for quantities from 5000 pcs - 0.62 USD