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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	60V
Drain current	6.1A
Pulsed drain current	25A
Power dissipation	2.8W
Case	SO8
Gate-source voltage	±20V
On-state resistance	51.6mΩ
Mounting	SMD
Gate charge	10nC
Kind of package	reel, tape
Kind of channel	enhancement

SI4946CDY-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A

Specification