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Manufacturer	VISHAY
Type of transistor	N/P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	20/-20V
Drain current	4/-3.7A
Power dissipation	3.1W
Case	ChipFET8
Gate-source voltage	±12V
On-state resistance	255/85mΩ
Mounting	SMD
Gate charge	5.6/4.2nC
Kind of package	reel, tape
Kind of channel	enhancement
Case - inch	1206
Case - mm	3216

SI5513CDC-T1-E3

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4/-3.7A

Specification