+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

Quick Buy Favourites

No U.S. Customs – Order from TME with Confidence

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	4A
Pulsed drain current	10A
Power dissipation	3.12W
Case	ChipFET8
Gate-source voltage	±20V
On-state resistance	0.1Ω
Mounting	SMD
Gate charge	7nC
Kind of package	reel, tape
Kind of channel	enhancement
Case - inch	1206
Case - mm	3216

SI5902BDC-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4A; Idm: 10A

Specification