SI5935CDC-T1-E3
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
Manufacturer: VISHAY
Manufacturer part number:
SI5935CDC-T1-E3
TME Symbol:
SI5935CDC-T1-E3
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -20V | |
Drain current | -4A | |
Pulsed drain current | -10A | |
Power dissipation | 2W | |
Case | ChipFET8 | |
Gate-source voltage | ±8V | |
On-state resistance | 156mΩ | |
Mounting | SMD | |
Gate charge | 11nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Case - inch | 1206 | |
Case - mm | 3216 |
Gross weight0.001 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SI5935CDC-T1-E3No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.25 USDGross price for quantities from 3000 pcs - 0.25 USD