SI5935CDC-T1-GE3
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -10A
Manufacturer: VISHAY
Manufacturer part number:
SI5935CDC-T1-GE3
TME Symbol:
SI5935CDC-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -20V | |
Drain current | -4A | |
Pulsed drain current | -10A | |
Power dissipation | 2W | |
Case | ChipFET8 | |
Gate-source voltage | ±8V | |
On-state resistance | 156mΩ | |
Mounting | SMD | |
Gate charge | 11nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement | |
Case - inch | 1206 | |
Case - mm | 3216 |
Gross weight0.025 g
Certificates
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* SI5935CDC-T1-GE3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 0.85 USDGross price for quantities from 1 pcs - 0.85 USD
Net price for quantities from 10 pcs - 0.58 USDGross price for quantities from 10 pcs - 0.58 USD
Net price for quantities from 50 pcs - 0.42 USDGross price for quantities from 50 pcs - 0.42 USD
Net price for quantities from 100 pcs - 0.36 USDGross price for quantities from 100 pcs - 0.36 USD
Net price for quantities from 500 pcs - 0.27 USDGross price for quantities from 500 pcs - 0.27 USD
Net price for quantities from 1000 pcs - 0.26 USDGross price for quantities from 1000 pcs - 0.26 USD