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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	40V
Drain current	6A
Pulsed drain current	10A
Power dissipation	7W
Case	ChipFET8
Gate-source voltage	±20V
On-state resistance	94mΩ
Mounting	SMD
Gate charge	5nC
Kind of package	reel, tape
Kind of channel	enhancement
Case - inch	1206
Case - mm	3216

SI5948DU-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 10A; 7W

Specification