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Manufacturer	VISHAY
Type of transistor	N/P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	20/-20V
Drain current	4.2/-4.9A
Pulsed drain current	30A
Power dissipation	1/1.1W
Case	TSSOP8
Gate-source voltage	±12V
On-state resistance	22/30mΩ
Mounting	SMD
Gate charge	23/51nC
Kind of package	reel, tape
Kind of channel	enhancement

SI6562CDQ-T1-GE3

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.2/-4.9A

Specification

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