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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	20V
Drain current	22A
Pulsed drain current	60A
Power dissipation	3.8W
Case	PowerPAK® 1212-8
Gate-source voltage	±16V
On-state resistance	6.1mΩ
Mounting	SMD
Gate charge	30nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7108DN-T1-E3

Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 22A; Idm: 60A; 3.8W

Specification